Twitter LinkedIn
Return to Wellspring


Method Of Transferring Strained Semiconductor Structures


Project TitleMethod Of Transferring Strained Semiconductor Structures
Track CodeU.S. Patent No. 7,638,410 (DOE S-109,115)
Short Description

Los Alamos National Laboratory - Express Licensing Program

The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

Tagssemiconductors, strained
Posted DateApr 5, 2013 8:31 PM

Licensing Terms and Conditions

This patent is offered for Non-Exclusive licensing through Los Alamos National Laboratory's Express Licensing Program.  The financial terms for an Express License are listed below:

One-Time Non-Exclusive License Issue Fee:

Seven Thousand Five Hundred ($7,500) U.S. Dollars

Annual License Fee:

Five Hundred ($500) U.S. Dollars

Earned Royalties on Sales:

Two Percent (2.0%)

To submit a license request, please contact Laura Barber, Mike Erickson or Marcus Lucero at Upon receipt of an Express License request, LANL will review your request to ensure that it meets the Express Licensing requirements, and if so, will send you a copy of the non-negotiable Non-Exclusive License Agreement for execution.

Intellectual Property

Patent Number Issue Date Type Country of Filing
U.S. Patent No. 7,638,410 Dec 29, 2009 Utility United States